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 TIP29, 30
High Power Bipolar Transistor
Features:
* Collector-Emitter sustaining voltageVCEO(sus) = 60V (Minimum) - TIP29A, TIP30A = 100V (Minimum) - TIP29C, TIP30C. * Collector-Emitter saturation voltageVCE(sat) = 0.7V (Maximum) at IC = 1.0A. * Current gain-bandwidth product fT = 3.0MHz (Minimum) at IC = 200mA.
Dimensions A B C D E F G H I J K Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). L M O
Minimum 14.68 9.78 5.01 13.06 3.57 2.42 1.12 0.72 4.22 1.14 2.20 0.33 2.48 3.70
Maximum 15.31 10.42 6.52 14.62 4.07 3.66 1.36 0.96 4.98 1.38 2.97 0.55 2.98 3.90
NPN TIP29A TIP29C
PNP TIP30A TIP30C
1.0 Ampere Complementary Silicon Power Transistors 40 - 100 Volts 30 Watts
TO-220
Dimensions : Millimetres
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31/05/05 V1.0
TIP29, 30
High Power Bipolar Transistor
Maximum Ratings
Characteristic Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation at TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG TIP29A TIP30A 60 5.0 1.0 3.0 0.4 30 0.24 -65 to +150 W W/C C TIP29C TIP30C 100 V Unit
A
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance Junction to Case Symbol Rjc Maximum 4.167 Unit C/W
Figure - 1 Power Derating
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31/05/05 V1.0
TIP29, 30
High Power Bipolar Transistor
Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic OFF Characteristics Collector-Emitter Sustaining Voltage (1) TIP29A, TIP30A (IC = 30mA, IB = 0) TIP29C, TIP30C Collector Cut off Current (VCE = 30V, IB = 0) TIP29A, TIP30A TIP29C, TIP30C (VCE = 60V, IB = 0) Collector Cut off Current (VCE = 60V, VEB = 0) TIP29A, TIP30A (VCE = 100V, VEB = 0) TIP29C, TIP30C Symbol Minimum Maximum Unit
VCEO(sus)
60 100
-
V
ICEO
-
0.3
ICES
-
0.2
mA
Emitter Cut off Current (VEB = 5.0V, IC = 0) ON CHARACTERISTICS (1) DC Current Gain (IC = 0.2A, VCE = 4.0V) (IC = 1.0A, VCE = 4.0V) Collector-Emitter Saturation Voltage (IC = 1.0A, IB = 125mA) Base-Emitter On Voltage (IC = 1.0A, VCE = 4.0V) DYNAMIC CHARACTERISTICS Current Gain-Bandwidth Product (2) (IC = 200mA, VCE = 10V, f = 1MHz) Small Signal Current Gain (IC = 200mA, VCE = 10V, f = 1kHz) (2) fT = hFE * fTEST.
IEBO
-
1.0
hFE
40 15
75 0.7
-
VCE(sat) VBE(on)
-
V 1.3
fT hfe
3.0
-
MHz
20
-
(1) Pulse Test: Pulse Width 300s, Duty Cycle 2.0%.
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31/05/05 V1.0
TIP29, 30
High Power Bipolar Transistor
Figure - 2 Turn-On Time Figure - 3 Switching Time Equivalent Circuit
Figure - 4 DC Current Gain
Figure - 5 Turn-Off Time
Figure - 6 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 6 curve is based on TJ(PK) = 150C; TC is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) 150C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
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31/05/05 V1.0
TIP29, 30
High Power Bipolar Transistor
Specifications
TYPE Part Number TIP29A NPN TIP29C TIP30A PNP TIP30C
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31/05/05 V1.0
TIP29, 30
High Power Bipolar Transistor
Notes:
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31/05/05 V1.0


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